Name of experiment
- DIODE CHARACTERISTICS
- ZENER DIODE CHARACTERISTICS
- LED CHARACTERISTICS
- TRANSISTOR CE CHARACTERISTICS
- TRANSISTOR CB CHARACTERISTICS
- JFET CHARACTERISTICS
- UJT CHARACTERISTICS
- SCR CHARACTERISTICS
- MOSFET CHARACTERISTICS
- DIAC CHARACTERISTICS
- TRIAC CHARACTERISTICS
- RECTIFIER AND FILTER CIRCUITS
- CLIPPING CIRCUITS
- CLAMPING CIRCUITS
- RC INTEGERATOR
- RC DIFFERENTIATOR
- RC LOW PASS FILTER
- RC HIGH PASS FILTER
- RC COUPLED AMPLIFIER
- ZENER REGULATOR
- ZENER REGULATOR WITH EMITTER FOLLOWER
- COMMON SOURCE JFET AMPLIFIER
V-I characteristics of Diode
AIM: To plot the forward and reverse V-I characteristics of silicon and germanium PN junction diodes and calculate their static and dynamic resistance.
COMPONENTS AND EQUIPMENTS REQUIRED: Diodes1N4007, DR25, Voltmeter, Ammeter and Variable power supply.
Procedure
Set up the circuit on breadboard as shown in figure; Keep the input voltage at 0V.
Vary the input voltage and note the corresponding readings of voltmeter and ammeter and plot the graph.
Then find out the static and dynamic resistance from the graph
